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IXA12IF1200PB
1200V 20A, High-Voltage Insulated Gate Bipolar Transistor (IGBT) with Diode
Pin Configuration (3 pins)
| Pin | Name | Type |
|---|---|---|
| 1 | G | passive |
| 2 | C | passive |
| 3 | E | passive |
1200V 20A, High-Voltage Insulated Gate Bipolar Transistor (IGBT) with Diode
| Pin | Name | Type |
|---|---|---|
| 1 | G | passive |
| 2 | C | passive |
| 3 | E | passive |